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US Patent Issued to International Business Machines on April 14 for "Interconnect with two-dimensional free zero line end enclosure" (New York, New Hampshire Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,716, issued on April 14, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Interconnect with two-dimensional free zer... Read More


US Patent Issued to International Business Machines on April 14 for "Interconnect with two-dimensional free zero line end enclosure" (New York, New Hampshire Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,716, issued on April 14, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Interconnect with two-dimensional free zer... Read More


US Patent Issued to NANYA TECHNOLOGY on April 14 for "Semiconductor structure and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,717, issued on April 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor structure and method of manufact... Read More


US Patent Issued to NANYA TECHNOLOGY on April 14 for "Semiconductor structure and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,717, issued on April 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor structure and method of manufact... Read More


US Patent Issued to SK hynix on April 14 for "Memory device and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,718, issued on April 14, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of manufacturing the same" was ... Read More


US Patent Issued to SK hynix on April 14 for "Memory device and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,718, issued on April 14, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of manufacturing the same" was ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor device having a through-via structure electrically connected to a contact structure" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,719, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device having a through-via ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor device having a through-via structure electrically connected to a contact structure" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,719, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device having a through-via ... Read More


US Patent Issued to Intel on April 14 for "Through mold interconnect drill feature" (Arizona Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,720, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Through mold interconnect drill feature" was invented by Robe... Read More


US Patent Issued to Intel on April 14 for "Through mold interconnect drill feature" (Arizona Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,720, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Through mold interconnect drill feature" was invented by Robe... Read More